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DXJ-560S Pyriform Double Chambers Magnetron Sputtering System
Application
It is apply for the preparation of a new type thin-film material, including nanoscale monolayer and multilayer multifunctional film, hard film, metal film, semiconductor film, dielectric film and so on. It can be widely applied for the thin-film material scientific research and small batch preparation of universities and research institutions.
Composition
The system mainly consists of main sputtering vacuum chamber, magnetron sputtering target, substrate water-cooling heat revolution plate, sample injection chamber, sample chamber, annealing furnace , backwash target, magnetic sample presentation institution, working gas circuit, pumping system, installation cabinet, vacuum measurement and electronic control system.
DXJ-560S Pyriform Double Chambers Magnetron Sputtering System
Technical Index
Model | DXJ-560S | |
Main Sputtering Vacuum Chamber | Pyriform sputtering vacuum chamber, size: Ø560*350mm | |
Sample Injection Chamber, | Cylindrical and horizontal, size: Ø250*420mm | |
Configuration of Vacuum System | Main sputtering chamber and sample injection chamber depend on independent molecular pump and mechanical pump units exhaust. | |
Ultimate Pressure | Main Sputtering Chamber | 6.67*10-6Pa (after bake and degassing) |
Sample Injection Chamber |
≤6.67*10-4Pa (after bake and degassing) | |
Time of Recovery Vacuum | Main Sputtering Chamber | Reach 6.6*10-4Pa in 40 mins ( expose in air for short time and inflate dry chlorine and then begin air exhaust) |
Sample Injection Chamber |
Reach 6.6*10-3Pa in 40 mins ( expose in air for short time and inflate dry chlorine and then begin air exhaust) | |
Component of Permanent Magnetron Sputtering Targets | Five permanent targets, target size: Ø60mm (One among them could sputter magnetic material.) Radio sputtering of each target and direct current sputtering are compatible. The distance between target and sample is 40-80mm, which is adjustable. | |
Substrate Water-cooling Heat Revolution Plate | Substrate Structure | 6 stations and one for installation of heating furnace other for water cooling substrate plate |
Sample Size | Ø30. It could accept 6 pieces | |
Mode of Motion | 0-360°back and front rotating | |
Heat | MAX. heat temperature of substrate 600℃±1℃ | |
Negative Substrate Bias | -200V | |
Air Circuit System | Quality flow controller 2 channel | |
Configuration of Sample Injection Chamber | Module of Sample Chamber | It could install 6 pieces samples one time. |
Module of Annealing Furnace |
MAX. heat temperature for substrate: 800℃±1℃ | |
Module of Backwash Target | It applies for backwashing of substrate. | |
Magnetic Sample Presentation Institution, | It is applies for the taking and sending of sample from sputtering chamber and sample injection chamber. | |
Computer Control System | Control the rotation of sample, open of baffle and confirmation of target place | |
Floor Space | Mainframe | 2600*900mm2 |
Electric Control Cabinet | 700*700mm2(2 sets) |
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