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DXALD Single Atomic Layer Film Growing Equipment

Introduction

Atomic Layer Deposition is a method for film preparation, which could precisely control the thickness of film. It could achieve the deposition of metal, oxide, carbide (N, S Si), various semiconductor materials and superconductor materials. The equipment is mainly for growth of dielectric material film, such as transparent conducting thin film, Al2O3 and so on, represented by ZnO. The operation of equipment is easy and reliable and the test parameter is flexible, which could meet the requirements for complicated evenly coat of films material of colleges and scientific institutions.

 

DXALD Single Atomic Layer Film Growing Equipment

DXALD Single Atomic Layer Film Growing Equipment

Technical Index

Ultimate Vacuum 5Pa
Whole Vacuum Leak Rate ＜10-8Pa.l/s
Vacuum Chamber Vacuum Cavity argon arc welding stainless steel material and upper lifted cover structure
Bottom Exhaust Port Connect vacuum dry pump
Substrate Heater Outer heating system, room temperature~500℃， continuous and adjustable
Size of Substrate. Ø50-100mm
Uniformity of Film Thickness As for Ø100mm elements ZnO film, the uniformity thickness of film is less than ±1%.
ALD Working Gas Transport Control  Gas Circuit Liquid Source Gas Circuit Customized
Gas Source Gas Circuit Customized
Vacuum Exhaust System Bilateral Oil Free Dry Vacuum Pump 1 set
Vacuum Pipeline 1 set
Vacuum Monitor  Prani Gauge Measuring range: 1.0*105 Pa-3*10-2 pa
Date Collection Record and Human-Computer Interface 1 set
Computer Control System Sample Heating Power Supply 1 set
 Magnetic 
Exchange 
Valve		 1 set
Main Control Power Supply 1 set
Installation Machine Steel material welding, mask quick release. Trundles can be fixed and can be moved.
Size of Equipment (length*width*height) 600*600*1200mm

 

 

 

 

 

 

 

 

 

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