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DXF-560 Magnetron and Ion Beam Compound System
DXF-560 Magnetron and Ion Beam Compound System
Application
It is apply for the preparation nanoscale monolayer and multilayer functional film, hard film, metal film, semiconductor film, dielectric film, ferromagnetic films, magnetic films and so on. It can be widely applied for the areas of semiconductor, microelectronics and new materials .
Composition
The system mainly consists of main sputtering vacuum chamber, magnetron sputtering target, substrate water-cooling heat revolution plate, Kaufman ion gun, 4 stations rotating targets, working gas circuit, pumping system, vacuum measurement and electronic control system.
DXF-560 Magnetron and Ion Beam Compound System
Technical Index
| Model | DXF-560 | |
| Size of Vacuum Chamber | Upright cylindrical, Ø550*450mm | |
| Configuration of Vacuum System | Compound molecular pump, mechanical pump, slide valve | |
| Ultimate Pressure | ≤6.67*10-5Pa (after bake and degassing) | |
| Time of Recovery Vacuum | Reach 6.6*10-4Pa in 40 mins ( expose in air for short time and inflate dry chlorine and then begin air exhaust) | |
| Substrate Water-cooling Heat Revolution Plate | Substrate Structure | 6 stations and one for installation of heating furnace other for water cooling substrate plate |
| Sample Size | Ø30mm. It could accept 6 pieces | |
| Mode of Motion | 0-360°back and front rotating | |
| Heat | MAX. heat temperature of substrate 600℃±1℃ | |
| Negative Substrate Bias | -200V | |
| Component of Magnetron Targets | Four permanent targets, target size: Ø60mm (One among them could sputter magnetic material.) Radio sputtering of each target and direct current sputtering are compatible. The distance between target and sample is 40-80mm, which is adjustable. | |
| Component of 4 Stations Rotating Targets | Target size: 70*70mm | |
| Main Sputtering Ion Gun | Diameter of extraction grid: Ø30mm, energy of ion beam:0.4-2.0Kev continuously adjustable, density of ion beam: 1-5mA/cm3 | |
| Aux desiment ion gun | Diameter of extraction grid: Ø30mm, energy of ion beam:0.4-1.5Kev continuously adjustable, density of ion beam: 1-3mA/cm3 | |
| Air Circuit System | Quality flow controller 3 channel | |
| computer Control System | Control target baffle, 4 stations rotation target change target, sample baffle and the temperature control of sample | |
| Floor Space | Mainframe | 1300*850mm2 |
| Electric Control Cabinet | 700*700mm2(2 sets) | |
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DXF-560 Magnetron and Ion Beam Compound System
DXT-450 Magnetron Sputtering System
