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DXLMBE-450 Laser Molecular Beam Epitaxy System
DXLMBE-450 Laser Molecular Beam Epitaxy System
Application
It is for developing optical crystal, ferroelectric, ferromagnet, superconductor and organic compounds film material. It is specially for developing complicated stratiform superlattice thin film material with high melting point, multielement and containing gas elements. It can be widely applied for the thin-film material scientific research and small batch preparation of universities and research institutions.
Composition
The system mainly consists of vacuum chamber (epitaxy chamber and sample injection chamber, sample delivery institution, sample stand, rotating target platform, vacuum exhaust, vacuum measurement, electric appliance control, distribution, computer control and so on.
DXLMBE-450 Laser Molecular Beam Epitaxy System
Technical Index
| Model | DXLMBE-450 | ||
| Main Vacuum Chamber | Sphere, size: Ø450mm | ||
| Sample Injection Chamber, | Cylindrical and horizontal, size: Ø150*300mm | ||
| Configuration of Vacuum System | Main Vacuum Chamber | Mechanical pump, molecular pump, lonic pump, sublimation pump, valve | |
| Sample Injection Chamber | Mechanicalpump, molecular pump, valve | ||
| Ultimate Pressure | Main Vacuum Chamber | ≤5*10-8Pa (after bake and degassing) | |
| Sample Injection Chamber |
≤5*10-3Pa (after bake and degassing) | ||
| Time of Recovery Vacuum | Main Vacuum Chamber | Reach 5*10-3Pa in 20 mins ( expose in air for short time and inflate dry chlorine and then begin air exhaust) | |
| Sample Injection Chamber |
Reach 5*10-3Pa in 20 mins ( expose in air for short time and inflate dry chlorine and then begin air exhaust) | ||
| Rotating Target Platform | Max. target size: Ø70mm, could install 4 pieces targets for one time, could achieve revolution change target and each target could achieve rotating. Rotating speed: 5-60 rpm | ||
| Substrate Heat Plate | Sample Size | Ø51 | |
| Mode of Motion | Substrate could continuously rotate. revolving speed: 5-60rpm | ||
| Heat | MAX. heat temperature of substrate 800℃±1℃ | ||
| Air Circuit System | Quality flow controller 1 channel, all-metal angle valve 1 channel | ||
| * Optional parts | Reflection high-energy electron diffraction (RHEED) | High energy power supply: Max. energy 25KV, Max. beam100μA | |
| RHEED intensity oscillation, growth rate monitoring system | Mainly consists of webcam, hardware, and computer control software package. | ||
| Laser beam scanning device | Two-dimension scanning mechanical stage, carry out two freely scanning | ||
| oxygen plasma generator and power supply | |||
| Computer Control System | It controls revolution target plate, rotation of target, rotation of sample, control temperature of sample, laser beam scanning and so on. | ||
| Quadrupole Mass Spectrometer | Mass number:1-100 | ||
| Floor Space | Mainframe | 1300*850mm2 | |
| Electric Control Cabinet | 700*700mm2(2 sets) | ||
Home >
vacuum applied systems >
DXLMBE-450 Laser Molecular Beam Epitaxy System
DXT-450 Magnetron Sputtering System
