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Home > vacuum applied systems > DXDC-650 Five Beams Source Furnace Copper Indium Gallium Selenium Thin Film Photovoltaic Cell Co-evaporation System

DXDC-650 Five Beams Source Furnace Copper Indium Gallium Selenium Thin Film Photovoltaic Cell Co-evaporation System

Application

This system is applied for developing copper, indium, gallium, selenium photovoltaic thin film.

Composition

The system mainly consists of copper, indium, gallium, selenium evaporation deposition chamber, sample injection chamber, beam source furnace, sample magnetic delivery institution, sample bank, sample heating institution, pump system, vacuum measurement, gas circuit system, electric control system and so on.

 

DXDC-650 Five Beams Source Furnace Copper Indium Gallium Selenium Thin Film Photovoltaic Cell Co-evaporation System

DXDC-650 Five Beams Source Furnace Copper Indium Gallium Selenium Thin Film Photovoltaic Cell Co-evaporation System

Technical Index

Deposition Chamber Size: Ø650*600mm
Sample Injection Chamber, Size: Ø250*640mm
Molecular Beam Source Furnace Four: copper, indium, gallium, selenium, size: Ø45*115mm
Configuration of Vacuum System Mechanical pump, molecular pump, gate valve
Ultimate Pressure Deposition Chamber ≤5*10-8Pa (after bake and degassing)
Sample Injection
 Chamber
≤6.6*10-5Pa (after bake and degassing)
Time of Recovery Vacuum Deposition Chamber Reach 5*10-4Pa in 40 mins ( expose in air for short time and inflate dry chlorine and then begin air exhaust)
Sample Injection
 Chamber
Reach 5*10-4Pa in 40 mins ( expose in air for short time and inflate dry chlorine and then begin air exhaust)
Sample Platform Place 4 pieces for one time, Size: Ø100mm
Temperature Deposition Chamber Room temperature ~800℃, controlled and adjustable
Sample Injection Chamber Room temperature ~500℃, controlled and adjustable
Molecular Beam Source Furnace (Copper) Room temperature ~1300℃±1℃, controlled and adjustable
Molecular Beam Source Furnace (Indium) Room temperature ~850℃±1℃, controlled and adjustable
Molecular Beam Source Furnace (Gallium) Room temperature ~1000℃±1℃, controlled and adjustable
Molecular Beam Source Furnace (Selemum) Room temperature ~350℃±1℃, controlled and adjustable
Floor Space Mainframe 4000*2000mm2
Electric Control Cabinet 700*700mm2(3 sets)

 

 

 

 

 

 

 

 

 

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