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DXPE Series Plasma Chemical Vapor Deposition Coating Equipment

Application

It applies for preparing various dielectric film, semiconducting film and so on according to reactant gas in vacuum condition. It provides ideal producing method for new materials and films scientific research field.

Composition

It mainly consists of vacuum chamber, upper cover components, sample heating plate, vacuum measurement system, air circuit system, electronic control system, rack system and so on.

 

DXPE Series Plasma Chemical Vapor Deposition Coating Equipment

DXPE Series Plasma Chemical Vapor Deposition Coating Equipment

Technical Index

Vacuum Chamber Upright cylindrical structure, size: Ø400*300mm
Configuration of Vacuum System  Lobe pump, mechanical pump, molecular pump, slide valve
Ultimate Pressure ≤6.67*10-5Pa (after bake and degassing)
Time of Recovery Vacuum Reach 6.6*10-4Pa in 40 mins ( expose in air for short time and inflate dry chlorine and then begin air exhaust)
Substrate Heat Plate Sample Size Ø100mm
Heat MAX. heat temperature of substrate 400℃±1℃
Negative Substrate Bias ≤-300V
Air Circuit System Quality flow controller 4 channel
Floor Space Mainframe 1100*860mm2
Electric Control Cabinet 700*700mm2 (1 set)
Air Circuit Cabinet 1200*600mm2(1 sets)

 

 

 

 

 

 

 

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